Rapid dislocation‐related D1‐photoluminescence imaging of multicrystalline Si wafers at room temperature

Abstract

Abstract Here we report on a novel method, which allows rapid photoluminescence imaging of band‐to‐band and dislocation‐related radiation, D1, on multicrystalline silicon wafers at room temperature. We demonstrate spatially resolved 5.0 × 5.0 cm 2 D1‐images, with a resolution of ∼120 µm, within a total recording time of 550 ms. The method provides homogeneous illumination over the whole sample area. Comparison with results from a conventional photoluminescence mapping technique demonstrates the potential of this new method for application as an in‐line wafer characterization technique.