Total ionizing dose effects in bipolar devices and circuits

Abstract

The development of the investigation of total dose effects in bipolar devices and circuits is covered over the past 40 years. There are at least four chronological stages in this field of study highlighted by the early studies on discrete transistors, the effects of total dose on linear circuits and I/sup 2/L, the effects of total dose on recessed field oxide digital circuits and, most recently, the low dose rate sensitivity of bipolar linear circuits.