Impurity-peak formation during proton-enhanced diffusion of phosphorus and boron in silicon

Abstract

The formation of a phosphorus or boron impurity peak in silicon has been observed following irradiation with monoenergetic protons. In this study we used a sample temperature of 700 °C, proton-beam energies of 50–140 keV, proton-beam current densities of ∼1 μA/cm2, and proton-bombardment times of 3 min to 3 h. The resultant impurity profiles were obtained using Schottky-barrier differential C-V techniques.