Europhysics Letters (EPL) · 2010 · 24 citations · 33 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsP-n JunctionsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesWide Band Gap SemiconductorsCharge LocalizationElectron LocalizationHeterostructuresLocalized StatesQuantum Wave FunctionQuantum Well Heterostructures
Quantum point contacts (QPCs) implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy. Besides one-dimensional conductance quantization, a pronounced extra plateau is found at about 0.7(2<I>e</I><SUP>2</SUP>/<I>h</I>) which possesses the characteristic properties of the so-called "0.7 anomaly" known from experiments with n-type samples. The evolution of the 0.7 plateau in high perpendicular magnetic field reveals the existence of a quasi-localized state and is consistent with the explanation of the 0.7 anomaly based on self-consistent charge localization. These observations are robust when lateral electrical fields are applied which shift the relative position of the electron wave function in the QPC, testifying to the intrinsic nature of the underlying physics.
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Quantized conductance of point contacts in a two-dimensional electron gas
B. J. van Wees, H. van Houten, C. W. J. Beenakker et al. · Physical Review Letters · 1988 · 3.1K citations · Full text
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