Dose Enhancement Effects in MOSFET IC's Exposed in Typical 60Co Facilities

Abstract

The responses of CMOS dosimeters sensitized to ionizing radiation by ion implantation have been used to demonstrate dose enhancement of 55 percent when exposed in typical 60Co facilities. Pairs of these IC's, one type with an alumina lid over the silicon chip and the other with a gold-kovar lid were used to evaluate this effect. Additional tests with a 1.3 mm thick lead filter show that the enhancement is predominately induced by low energy components in the radiation fields.