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Quantum confined one-dimensional electron-hole plasma in semiconductor quantum wires
100
Citations
11
References
1991
Year
Gaas Quantum WiresQuantum ScienceElectrical EngineeringPhotoluminescenceEngineeringPhysicsQuantum DeviceApplied PhysicsQuantum MaterialsSemiconductor Quantum WiresElectron-hole PlasmaActive Wire WidthLuminescence PropertyOptoelectronics
We report a study of the temporal evolution of the luminescence from an electron-hole plasma confned in GaAs quantum wires under high-power excitation. In the spectra 1D intersubband transitions with quantum numbers as high as n=5 are resolved. The spectral positions are in excellent agrement with Kohn-Luttinger calculations based on an active wire width of w=60\ifmmode\pm\else\textpm\fi{}5 nm, accurately determined by an x-ray diffraction method employed for 1D systems. The decay of the luminescence and the hot-carrier cooling rate, which is obtained from line-shape analysis, are found to be slower than the corresponding processes in quantum wells.
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