Redistribution of ion-implanted impurities in silicon during diffusion in oxidizing ambients

Abstract

A closed form expression for the redistribution of ion-implanted impurities in silicon during diffusion in an oxidizing ambient is derived, based on a theoretical model proposed by Huang and Welliver. It is shown that the computed results for boron profiles agree very well with experimental data. The closed form solution requires considerably less computer execution time than the usual numerical solution.