Concepedia

Silicon carbide on insulator formation using the Smart Cut process [Note 1]

L. Di Cioccio, Y. Le Tiec, F. Letertre, C. Jaussaud, M. Bruel

Electronics Letters · 1996 · 120 citations · 3 references

DOI

Concepts

Abstract

The Smart Cut process has been applied for the first time to SiC, in order to form silicon carbide on insulator (SiCOI) structures. These structures have been formed on polycristalline SiC and on silicon substrates.

References

3

Silicon on insulator material technology

M. Bruel · Electronics Letters · 1995 · 1K citations

, , +16

Application of hydrogen ion beams to Silicon On Insulator material technology

M. Bruel · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 313 citations

, , +10

Silicon Carbide Wafer Bonding

Qiaoling Tong, U. Gösele, Cailei Yuan et al. · Journal of The Electrochemical Society · 1995 · 35 citations · Full text

, , +17