Japanese Journal of Applied Physics · 1998 · 14 citations · 23 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureSurface ChemistryThin FilmsEpitaxial GrowthSemiconductor SurfacesSemiconductor Thin FilmsSilicon MaterialsSurface PhysicsThin Film Surface MorphologyBuffer LayersFilm Growth MechanismsGrazing-incidence X-ray DiffractionOxide Layer MorphologyPulsed Laser DepositionSecondary Ion Mass SpectrometryThin-film Growth MechanismsX-ray Diffraction Analysis
The PbTiO 3 thin film was deposited on Si(100) with Y 2 O 3 and CeO 2 buffer layers. Y 2 O 3 , CeO 2 and PbTiO 3 layers were fabricated by the in-situ pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) analysis revealed that the Y 2 O 3 and CeO 2 layers were (222) and (200) preferential orientation, respectively. PbTiO 3 showed (100)+(001) mixed texture on CeO 2 /Si and polycrystalline on Y 2 O 3 /Si, respectively. Characterization of the grazing angle incident X-ray diffraction showed that the stress depth profile of the PbTiO 3 thin film on CeO 2 /Si(100) was not uniform. The secondary ion mass spectroscopy (SIMS) analysis indicated that the CeO 2 and Y 2 O 3 layers reduced significantly the interdiffusion of Si atoms into PbTiO 3 and that the distributions of Pb and Ti elements were uniform throughout the PbTiO 3 layer. The columnar crystallization of CeO 2 , Y 2 O 3 , and PbTiO 3 films were observed by scanned electron microsopy (SEM).
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Epitaxial growth of CeO2 layers on silicon
Tomoyasu Inoue, Y. Yamamoto, S. Koyama et al. · Applied Physics Letters · 1990 · 266 citations
Electrical characteristics of epitaxial CeO2 on Si(111)
Lee Tye, N. A. El-Masry, Toyohiro Chikyow et al. · Applied Physics Letters · 1994 · 158 citations