Applied Physics Letters · 1991 · 236 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsThin FilmsEpitaxial GrowthSuperconducting Thin FilmsThin-film MaterialsCritical Current DensityCurrent DensityDeposition RateEpitaxial Film GrowthEpitaxial Thin FilmsEpitaxial Thin-film GrowthLattice MismatchPulsed Laser Deposition
Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (−22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa2Cu3O7−δ/BaTiO3 thin films on Si with a critical current density of 6.7×105 A/cm2 at 77 K.
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Epitaxial growth of CeO2 layers on silicon
Tomoyasu Inoue, Y. Yamamoto, S. Koyama et al. · Applied Physics Letters · 1990 · 266 citations
High critical currents in strained epitaxial YBa2Cu3O7−δ on Si
D. K. Fork, D. B. Fenner, R. Barton et al. · Applied Physics Letters · 1990 · 255 citations