Polycrystalline Zn₃P₂/Indium-Tin Oxide Solar Cells

Abstract

Zinc phosphide (Zn 3 P 2 )/indium-tin oxide (ITO) heterojunction solar cells are fabricated by rf sputter depositing ITO on large grain polycrystalline Zn 3 P 2 wafers. An AES analysis indicates that sputter etching of the Zn 3 P 2 wafer surface before depositing ITO is of great importance in achieving a better performance as a solar cell. The passivation of Zn 3 P 2 by reaction with atomic hydrogen is found to improve the cell performance significantly. Consequently, a power conversion efficiency of 2.1% (6 mm 2 in active area) has been obtained without antireflection coating.