Applied Physics Letters · 2013 · 24 citations · 22 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsMaterials ChemistryFerromagnetic MaterialsFerromagnetismMagnetic OxidesMagnetic Properties Of SolidsMagnetism In SolidsSpintronic MaterialsFerromagnet InterfacesInterface StructureLattice PlanesMagnetic Tunnel JunctionsMagnetocrystalline AnisotropyPerpendicular Magnetic AnisotropyScanning Transmission Electron MicroscopyTunnel Junctions
Perpendicular magnetic tunnel junctions (p-MTJs) with MgO barriers are interesting for high-density information-storage devices. Chemically ordered L10-FePt is a potential electrode due to its large perpendicular magnetocrystalline anisotropy. To-date, a single theoretical study on L10-FePt/MgO p-MTJ based on an idealized structure reported significant dependence of spin-dependent tunneling on interface structure. [Y. Taniguchi et al., IEEE Trans. Magn. 44, 2585 (2008).] We report a structural study of epitaxial L10-FePt(001)[110]//MgO(001)[110]//L10-FePt(001)[110] p-MTJs, focusing on the interfaces using aberration-corrected scanning transmission electron microscopy. Interfaces are semi-coherent, with oxygen atomic-columns of MgO located opposite to iron atomic-columns in L10-FePt. Up to three lattice planes show atomic-column steps, the origin of which is attributed to antiphase boundaries in L10-FePt.
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Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
S. Parkin, Christian Kaiser, Alex Panchula et al. · Nature Materials · 2004 · 3.3K citations
High K/sub u/ materials approach to 100 Gbits/in/sup 2/
D. Weller, A. Moser, L. Folks et al. · IEEE Transactions on Magnetics · 2000 · 1.4K citations
Natural Sciences, Materials Engineering, Materials Science +17