Hydrocarbon reaction with HF-cleaned Si(100) and effects on metal-oxide-semiconductor device quality

Abstract

The surface reactivity of hydrogen-passivated, HF-cleaned Si(100) towards hydrocarbon adsorption is examined by surface analysis; most hydrocarbons adsorb on the surface. Dangling bonds formed during thermal processing react with fragmented organic molecules forming SiC. Metal-oxide-semiconductor devices fabricated on contaminated surfaces are degraded, with the degree of degradation depending on the nature of the contaminant.