Preparation and properties of amorphous phosphorus nitride prepared in a low-pressure plasma

Abstract

Abstract Thin films of amorphous P3N5 and P3N5Hx have been deposited in a low-pressure plasma either from the elements or from phosphine and nitrogen. Electric, optical and structural properties of these compounds are derived from measurements of the dark conductivity, of the I.R., optical and U.V. absorption, of Raman spectra and from studies using X-ray photoelectron spectrometry and differential scanning calorimetry. A structural model of the amorphous phosphorus nitride is presented.