IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing · 2006 · 111 citations · 16 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyNoise In Electronic DevicesNoise In Semiconductor DevicesTransistor BiasingWide-bandgap Semiconductor DevicesBandgap Reference CircuitsBandgap Reference DesignBandgap ReferencesBandgap Voltage ReferencesBias Temperature CompensationCmos Analog Integrated CircuitsCurrentsVoltage Reference Design
A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic n-p-n and p-n-p bipolar junction transistor devices in the CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-mum CMOS process. The experimental results have confirmed that, with the minimum supply voltage of 0.9 V, the output reference voltage at 536 mV has a temperature coefficient of 19.5 ppm/degC from 0 degC to 100 degC. With a 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz
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A CMOS bandgap reference circuit with sub-1-V operation
H. Banba, H. Shiga, Akira Umezawa et al. · IEEE Journal of Solid-State Circuits · 1999 · 886 citations