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Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs
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1995
Year
SemiconductorsElectrical EngineeringEngineeringPhysicsAs Self-diffusion CoefficientIntrinsic ImpurityApplied PhysicsCondensed Matter PhysicsSulfur DiffusionArsenic Self-diffusionInterstitial ContributionSulfur Indiffusion ProfilesAs Self-interstitial ContributionsSemiconductor MaterialMicroelectronicsCompound SemiconductorCategoryiii-v SemiconductorSemiconductor Device
A quantitative determination of the contribution of As self-interstitials to the As self-diffusion coefficient in GaAs has been carried out. Values of the As self-interstitial contributions are deduced from sulfur indiffusion profiles in GaAs, which are simulated based on the kick-out mechanism. Furthermore, the relative contributions of As self-interstitials and of As vacancies are discussed.