Teh Y. Tan - Concepedia

Author

Teh Y. Tan

Duke University

Also Known As

Teh Tan, Teh Y Tan, Teh Y. Tan, Teh Y. Tan Teh Y. Tan, Teh Yu Tan

Publications

872

Citations

H-Index

Concepts

All Affiliations

Duke University Max Planck Institute of Microstructure Physics IBM Research - Thomas J. Watson Research Center

About

Teh Y. Tan is an author at Duke University specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	806
2	Applied Physics	13	14	806
3	Electrical Engineering	5	5	201
4	Chemistry	2	2	34
5	Natural Sciences	1	1	17

Teh Y. Tan

Publications

806

Citations

H-Index

Page 1

	Year	Citations
Ion-induced defects in semiconductors J. W. Corbett, James P. Karins, Teh Y. Tan Nuclear Instruments and Methods SemiconductorsIon ImplantationEngineeringIon-induced DefectsPhysics	1981	205
Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation Raphael Tsu, R. T. Hodgson, Teh Y. Tan, Physical Review Letters Single-crystal Silicon InducedOptical MaterialsEngineeringOrder-disorder Laser-radiation-induced TransitionTransmission Electron Microscopy	1979	155
Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes Na Li, Teh Y. Tan, U. Gösele Applied Physics A EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsElectronic Devices	2008	97
A model of Si diffusion in GaAs based on the effect of the Fermi level Shaofeng Yu, U. Gösele, Teh Y. Tan Journal of Applied Physics SemiconductorsElectrical EngineeringEngineeringPhysicsCrystalline Defects	1989	82
Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process? Teh Y. Tan, Na Li, U. Gösele Applied Physics Letters EngineeringThermodynamic Size LimitMinimum SizesNanoelectronicsNanoscale Modeling	2003	65
Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices Horng-Ming You, U. Gösele, Teh Y. Tan Journal of Applied Physics Wide-bandgap SemiconductorEngineeringCvga3−eq ValuesSemiconductor DeviceSemiconductors	1993	38
Improvement of minority carrier diffusion length in Si by Al gettering Subhash M. Joshi, U. Gösele, Teh Y. Tan Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringDislocation PassivationEngineering	1995	38
Sulfur diffusion and the interstitial contribution to arsenic self-diffusion in GaAs Masashi Uematsu, P. Werner, Matthias Schultz, Applied Physics Letters SemiconductorsElectrical EngineeringEngineeringPhysicsAs Self-diffusion Coefficient	1995	26
Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si Subhash M. Joshi, U. Gösele, Teh Y. Tan Solar Energy Materials and Solar Cells Materials ScienceMaterials EngineeringAluminium NitrideSinteringEngineering	2001	23
A study of Si outdiffusion from predoped GaAs Horng-Ming You, U. Gösele, Teh Y. Tan Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsIntrinsic Gaas	1993	17

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