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AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
82
Citations
8
References
1989
Year
SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyGrowth TemperatureDevice I-v CharacteristicEngineeringEpitaxial GrowthAlinas-gainas HemtsElectronic EngineeringApplied PhysicsShort AnnealMolecular Beam EpitaxyMicroelectronicsOptoelectronicsCategoryiii-v Semiconductor
Low-temperature AlInAs buffer layers incorporated in AlInAs-GaInAs HEMT epitaxial layers grown by MBE are discussed. A growth temperature of 150 degrees C followed by a short anneal is shown to eliminate kinks in the device I-V characteristic and sidegating and to reduce the output conductance dramatically.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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