The electron distribution in silicon - I. Experiment

Abstract

Abstract We have completed absolute measurements of the X-ray structure factors of silicon by the Pendellösung method using the techniques developed by Hart & Milne (1969). The 111, 220, 311, 400, 331, 422, 333, 511, 440, 444, 642, 660, 555, 844 and 880 reflexions were all measured in the symmetric Laue case with both MoKα1, and AgKα1 radiations and at 92.2 and 293.2 K. The internal consistency of the results indicates that probable errors of order 0.1% are realistic.