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State creation induced by gate bias stress in unhydrogenated polysilicon TFTs

Electrical EngineeringEngineeringPhysicsGate Bias StressNanoelectronicsUnhydrogenated Polysilicon TftsStress-induced Leakage CurrentApplied PhysicsBias Temperature InstabilitySemiconductor Device FabricationState CreationSilicon On InsulatorMicroelectronicsSemiconductor Device