SiC MEMS: opportunities and challenges for applications in harsh environments

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition

Christian A. Zorman, Aaron J. Fleischman, A.S. Dewa et al. · Journal of Applied Physics · 1995 · 225 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth and Characterization of Cubic SiC Single‐Crystal Films on Si

J. A. Powell, L. G. Matus, Maria A. Kuczmarski · Journal of The Electrochemical Society · 1987 · 184 citations

Natural Sciences, Materials Engineering, Materials Science +17

Towards a unified view of polytypism in silicon carbide

Graham R. Fisher, P. Barnes · Philosophical Magazine B · 1990 · 152 citations

Natural Sciences, Materials Engineering, Materials Science +17

Operation of α(6H)-SiC pressure sensor at 500 °C

Robert S. Okojie, Alexander A. Ned, A. D. Kurtz · Sensors and Actuators A Physical · 1998 · 111 citations

Engineering, Materials Engineering, Materials Science +12