Crystal Research and Technology · 1998 · 44 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice ModelingSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesDiode Current-voltage CharacteristicsForward Bias CharacteristicsJunction Ideality FactorSaturation CurrentSchottky Barrier DiodesSchottky BarriersSpace-charge EffectsSpace-charge-limited Current
Schottky diodes, fabricated by local in diffusion of indium onto p-type single crystals of CuIn0.8Ga0.2Se2 have been shown to exhibit space-charge-limited current effects under forward bias. Two regions are clearly observed in the current-voltage characteristics of the device; the first one associated with the saturation-velocity regime and the second region that corresponds to the ballistic regime with a V3/2 dependence (Child-Langmuir law). The observed characteristic was used to calculate the semiconductor potential (Ei ≈︂ 0.15 eV). By means of photovoltaic effects the barrier height (φB ≈︂ 0.74 eV) and the ideality factor (n = 1.7) of the diode were also obtained.
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Transport properties of CuInSe2
S. M. Wasim · Solar Cells · 1986 · 222 citations
Phase Diagram and Optical Energy Gaps for CuInyGa1−ySe2 Alloys
T. Tinoco, Carlos Rincón, M. Quintero et al. · physica status solidi (a) · 1991 · 116 citations
Natural Sciences, Materials Engineering, Materials Science +17
Characterization of the defect levels in copper indium diselenide
F. Abou-Elfotouh, Helio Moutinho, Assem Bakry et al. · Solar Cells · 1991 · 75 citations
Natural Sciences, Materials Engineering, Materials Science +14
On the Hole Mobility of CuGaSe2
S. M. Wasim, G. S. Porras · physica status solidi (a) · 1983 · 15 citations