Publication | Closed Access
Aligned and twinned orientations in epitaxial CoSi2 layers
31
Citations
12
References
1990
Year
Oxide HeterostructuresMaterials ScienceEngineeringEpitaxial Cosi2 LayersCrystalline DefectsPhysicsType BApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresMolecular Beam EpitaxyLayered MaterialEpitaxial GrowthIon Beam SynthesisHeteroepitaxial Cosi2 Layers
Heteroepitaxial CoSi2 layers have been made by ion beam synthesis and solid phase epitaxy in Si〈111〉 substrates. Using the x-ray rocking curves of the asymmetric (331) reflections we are able to determine very accurately the relative amount of aligned (type A) and twinned (type B) CoSi2 in samples with different thicknesses. It is shown that for epilayers thinner than 360 Å, the relative amount of type A CoSi2 decreases from 100% to 30%.
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