Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length

Abstract

This letter describes an asymmetric gate tunnel field-effect transistor (AG-TFET) with a gate-all-around (GAA) structure in the source and a planar structure in the drain. It has a low OFF-state current (6.55 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-16</sup> A/μm) and a high ON-state current (2.47 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-5</sup> A/μm) because the screening length λ of a GAA nanowire structure is half that of the planar structure. Simulations reveal that a subthreshold swing as low as 42 mV/decade and an ON/OFF current ratio as high as 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> are realized. The AG-TFET is easily fabricated as an actual device by simply changing the layout of gate in a general TFET fabrication.