Novel Temperature-Dependent Junction Characteristics of Poly(3-alkylthiophene) Schottky Diodes

Abstract

Electrical characteristics of poly(3-alkylthiophene) and metal interfaces have been studied. Good Schottky type diodes have been fabricated using aluminum and gold-tin electrodes vacuum-evaporated onto poly(3-alkylthiophene) films. Markedly large temperature dependences are observed for poly(3-alkylthio-phene) Schottky diodes and discussed in terms of a temperature-dependent electronic band scheme.