Japanese Journal of Applied Physics · 1990 · 28 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsWide Band Gap SemiconductorsElectronic Band TheoryMetal-semiconductor InterfacesPolythiopheneSchottky BarriersSchottky ContactsSemiconductor HeterojunctionsSemiconductor JunctionsTemperature Dependence Of Diodes
Electrical characteristics of poly(3-alkylthiophene) and metal interfaces have been studied. Good Schottky type diodes have been fabricated using aluminum and gold-tin electrodes vacuum-evaporated onto poly(3-alkylthiophene) films. Markedly large temperature dependences are observed for poly(3-alkylthio-phene) Schottky diodes and discussed in terms of a temperature-dependent electronic band scheme.
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Phototransport effects in polyacetylene, (CH)x
Tadaaki Tani, P. M. Grant, W. D. Gill et al. · Solid State Communications · 1980 · 133 citations