A Unified-RAM (URAM) Cell for Multi-Functioning Capacitorless DRAM and NVM

Abstract

A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless 1T-DRAM and non-volatile memory (NVM). A floating body and O/N/O layer are combined in a single FinFET to provide multi-functional unified-RAM (URAM) operation. The fabricated URAM shows a V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> window of 3V with a retention time exceeding 10 years for NVM operation and a sensing margin of 9μA with a program/erase time of 10nsec for 1T-DRAM operation in a single memory cell transistor.