Study on Pb-Based Ferroelectric Thin Films Prepared by Sol-Gel Method for Memory Application

Abstract

Pb(Zr,Ti)O 3 (PZT), PbTiO 3 (PT), and (Pb,La)TiO 3 (PLT) thin films were deposited by sol-gel method on Pt/IrO 2 electrodes. Deposited films were annealed at 625–700° C by rapid thermal annealing (RTA). These prepared films were examined as to whether they were suitable for ferroelectric nonvolatile memory using a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure. In the application to a MFMIS structure, widely used PZT films have some problems such as the cracking on SiO 2 and too high a dielectric constant. In this study, we examined the ferroelectric thin films to solve these problems.