Attachment–detachment limited kinetics on ultra-flat Si(111) surface under etching with molecular oxygen at elevated temperatures

General Relationship for the Thermal Oxidation of Silicon

B. E. Deal, Andrew S. Grove · Journal of Applied Physics · 1965 · 3.4K citations

Natural Sciences, Chemistry, Materials Science +17

The interaction of molecular and atomic oxygen with Si(100) and Si(111)

Thomas Engel · Surface Science Reports · 1993 · 307 citations

Natural Sciences, Chemistry, Materials Science +12

Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces

Heiji Watanabe, Koichi Kato, Tsuyoshi Uda et al. · Physical Review Letters · 1998 · 288 citations

Natural Sciences, Materials Engineering, Materials Science +17

High atom density in the ‘‘1×1’’ phase and origin of the metastable reconstructions on Si(111)

Y.-N. Yang, Ellen D. Williams · Physical Review Letters · 1994 · 208 citations

Natural Sciences, Materials Science, Physics +16

Real-time observations of vacancy diffusion on Si(001)-(2×1) by scanning tunneling microscopy

N. Kitamura, M. G. Lagally, M. B. Webb · Physical Review Letters · 1993 · 135 citations

Natural Sciences, Materials Engineering, Materials Science +17