Japanese Journal of Applied Physics · 1985 · 12 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum DotsQuantum OptoelectronicsQuantum WellsSemiconductor HeterostructuresWide Band Gap SemiconductorsPhotoluminescence In Quantum WellsQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well StatesQuantum Well Structures
Photoluminescence properties were compared between two types of multi-quantum-well (MQW) structures. One of them had a potential well layer composed of binary GaAs, and the other was composed of ternary Al x Ga 1- x As. It is shown that the ternary well MQW structure is more favorable with respect both to higher emission energy and to photoluminescence linewidth than the binary well MQW structure.
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