Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantation

Abstract

Deep level transient spectroscopy was applied to study silicon epitaxial layers of varying thickness grown on silicon-on-insulator substrates formed by oxygen implantation. For 3-μm-thick layers no traps were detected. For 1.0-, 2.0-, and 2.5-μm-thick layers electron traps were found with levels 0.34, 0.32, and 0.37 eV below the conduction-band edge, and corresponding capture cross sections of ∼2.0×10−7, 6.0×10−18, and 5.0×10−7 cm2. These levels were found to be uniformly distributed across the wafer. It was also observed that the trap concentration is a decreasing function of epilayer thickness.