Cyclotron-phonon resonance in quasi-two-dimensional semiconducting structures

Abstract

A theory of phonon-assisted cyclotron resonance in quasi-two-dimensional semiconductor quantum-well structures is given. Using perturbation technique, expressions for absorption coefficients are obtained when the electrons are scattered by acoustic, nonpolar, and polar optical phonons. Extra peaks in the absorption spectrum due to transitions between Landau levels accompanied by emission and absorption of phonons are predicted. Numerical results for the frequency, magnetic field, and temperature dependence are given for parameters characteristic of GaAs.