The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7) - Concepedia

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The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)

124

Citations

41

References

1985

Year

H.‐J. Gossmann, L. C. Feldman, W. M. Gibson

Surface Science

Materials ScienceMaterials EngineeringEngineeringCrystalline DefectsApplied PhysicsCondensed Matter PhysicsSemiconductor MaterialMolecular Beam EpitaxyEpitaxial Growth

References

	Year	Citations

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