Preferential Etching of InP for Submicron Fabrication with HCl /  H 3 PO 4 Solution

Abstract

Etching rates of preferential etchant for the (100) surface are determined experimentally, particularly at low concentration suitable for submicron fabrication processes. A very slow but reproducible etching rate of 1000 Å/min is obtained at 5% concentration at room temperature with almost vertical (011) facets on a (100) plane. Concentration dependence of the etching rates and surface pretreatment effects are also investigated.