Kinetic properties of TiN thin films prepared by reactive magnetron sputtering

Abstract

Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconductor n -type conduction. The carrier concentration is ∼10 22 cm −3 , while electron scattering occurs at ionized titanium atoms.