The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices - Concepedia

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The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices

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References

2011

Year

Xingguang Zhu, A. C. Ahyi, Mingyu Li, Zengjun Chen, John Rozen, L. C. Feldman, John R. Williams

Solid-State Electronics

Semiconductor TechnologyElectrical EngineeringEngineeringInterface Trap DensityNanoelectronicsApplied PhysicsChannel MobilitySemiconductor Device FabricationNitrogen Plasma AnnealsSemiconductor Device

References

	Year	Citations

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