Summary Abstract: Material properties and clustering in molecular-beam epitaxial In0.52Al0.48As and In1−<i>x</i>−<i>y</i>Ga<i>x</i>Al<i>y</i>As - Concepedia

Concepedia

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Summary Abstract: Material properties and clustering in molecular-beam epitaxial In0.52Al0.48As and In1−<i>x</i>−<i>y</i>Ga<i>x</i>Al<i>y</i>As

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References

1987

Year

W-P. Hong, Albert Chin, Nacer Debbar, John Hinckley, P. Bhattacharya, J. Singh, R.C. Clarke

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceMaterial PropertiesEngineeringPhysicsCrystalline DefectsApplied PhysicsCondensed Matter PhysicsSummary AbstractMolecular Beam EpitaxyEpitaxial GrowthMolecular-beam Epitaxial In0.52al0.48asSemiconductor Nanostructures

Abstract

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