Low-temperature photoluminescence studies of mercuric-iodide photodetectors

Abstract

Mercuric-iodide (HgI2 ) photodetectors with sputtered indium-tin-oxide (ITO) entrance electrodes were studied using low-temperature photoluminescence spectroscopy. The photoluminescence spectrum obtained on each photodetector was found to differ for points beneath the ITO contact and points adjacent to it, indicating that the contact fabrication process introduces new carrier traps and radiative recombination centers within the ITO-HgI2 interfacial region. In particular, a new broad band was observed in the spectra taken from points beneath the ITO electrode. Photocurrent-versus-position measurements showed that the intensity of this broad band was enhanced in regions having relatively poor photoresponse.