Semiconductor Science and Technology · 1987 · 11 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesTransistor BiasingBuried Channel DevicesDevice Noise CharacterizationExcess NoiseGeneration-recombination NoiseNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect TransistorsSurface StatesTransistor Noise
A definitive experiment is described on the excess noise in a buried-channel MOS transistor. The specimen was biased with a uniform, Ohmic, channel. With the surface enhanced 1/f noise is produced. With the surface depleted or inverted the noise drops by more than two orders of magnitude and takes on the character of the 1/f noise observed in JFETs. Also seen is a large generation-recombination noise peak involving the fast surface states. The implications for excess noise theory and device design are discussed.
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