Photoacoustic determination of non-radiative carrier lifetimes

Abstract

From photoacoustic (PA) experiments we determine the nonradiative carrier lifetime in direct band-gap semiconductors. We use the Rosencwaig and Gerscho model to calculate the PA signal in semiconductors taking into account the distinction between non-radiative and radiative carrier lifetimes. We have assumed that for our high quality crystalline samples, the main contribution to the non-radiative processes comes from CHCC and CHSH Auger recombination for n and p-type materials, respectively. For GaAs, InSb and GaSb samples, the experimental data obtained by means of an open photoacoustic cell were fitted to the theoretical model and we show that the values we determined for the non-radiative recombination lifetime agree well with those reported in the literature.