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Single Crystalline Ge<sub>1-<i>x</i></sub>Mn<sub><i>x</i></sub>Nanowires as Building Blocks for Nanoelectronics
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2008
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Building BlocksSupercritical Fluid MethodEngineeringFerrofluidMn-doping ConcentrationMagnetoresistanceSemiconductor NanostructuresSemiconductorsMagnetismNanoelectronicsMaterials ScienceNanoscale SystemPhysicsNanotechnologyMagnetic MaterialSpintronicsFerromagnetismGe NanowiresElectronic MaterialsNanomaterialsNatural SciencesApplied PhysicsMagnetic DeviceNanostructures
Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.