Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation

Abstract

The suitable dose and annealing temperature for high energy ion implantation to form a retrograde well or a buried conductive layer for CMOS devices were investigated by studying I - V and C - V characteristics. Boron ions were implanted in Si at 400 and 700 keV with doses ranging from 1×10 13 cm -2 to 3×10 14 cm -2 . It was found that the leakage currents induced by high energy boron implantation at 400 and 700 keV with a dose of less than 3×10 13 cm -2 could be suppressed at an unimplanted level by annealing at 950°C for 20 minutes.