Electrical properties of platinum in silicon as determined by deep-level transient spectroscopy

Abstract

Platinum was diffused into p+nn+ and n+pp+ silicon diodes at temperatures ranging from 860 to 910 °C for approximately 1 h. Using deep-level transient spectroscopy, six levels associated with platinum in these silicon devices were detected. Ev+0.19 eV, Ev+0.28 eV, Ev+0.33 eV, Ev+0.41 eV, Ec−0.34 eV, and Ec−0.23 eV. The concentrations, thermal emission rates, and the capture cross sections for majority carriers at these defects are reported. The Ec−0.34 eV level has not been previously characterized but is probably the dominant recombination center.