The effective carrier lifetime measurement in silicon: The conductivity modulation method

Abstract

Dark, gamma-induced conductivities and conductivity modulation in silicon material will be investigated for the development of carrier lifetime measurement. The present work includes a simple method for finding the carrier lifetime variation from the measured conductivity under dark and gamma irradiation conditions. It will be concluded that an improved material evaluation in the area of semiconductors and nano-materials are expected to improve the efficiency of solar cells and other opto-electronic devices.