Radiation-resistant photoconductivity of doped silicon under 17 MeV proton bombardment

Defects in Irradiated Silicon. II. Infrared Absorption of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>Center

J. W. Corbett, G. D. Watkins, R. M. Chrenko et al. · Physical Review · 1961 · 361 citations

Natural Sciences, Materials Science, Physics +15

1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy

L. J. Cheng, J. C. Corelli, J. W. Corbett et al. · Physical Review · 1966 · 328 citations

Natural Sciences, Materials Science, Physics +17

Infrared Absorption and Photoconductivity in Irradiated Silicon

Heng Fan, A. K. Ramdas · Journal of Applied Physics · 1959 · 183 citations

Engineering, Materials Engineering, Materials Science +17

Energy Levels in Electron-Bombarded Silicon

G. K. Wertheim · Physical Review · 1957 · 109 citations

Engineering, Materials Science, Electronic Materials +16

Infrared Studies of Defect Production in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Si: Irradiation-Temperature Dependence

R. E. Whan, F. L. Vook · Physical Review · 1967 · 53 citations

Engineering, Materials Engineering, Materials Science +17