Deposition of Polycrystalline 3C-SiC Films on 100 mm Diameter Si(100) Wafers in a Large-Volume LPCVD Furnace

Abstract

The chemical and microstructural characteristics of silicon carbide films deposited on 100 mm diam, silicon (100) wafers in a large-volume, low-pressure chemical vapor deposition (LPCVD) furnace using dichlorosilane and acetylene were investigated. The deposition temperature was held constant at 900°C and the pressure ranged between 460 and 510 mTorr. X-ray photoelectron spectroscopy data indicated that stoichiometric SiC was deposited using molar ratios of 4:1, 6:1, and 8:1. X-ray diffraction showed that the stoichiometric films were highly textured, 3C-SiC(111) at all locations across each wafer. These findings indicate that the precursor system has great potential for use in large-scale LPCVD furnaces and produces SiC films with a microstructure that has advantageous properties for use in high-frequency resonator micromechanical devices. © 2002 The Electrochemical Society. All rights reserved.