Phase equilibria in thin-film metallizations

Abstract

The determination of stable tie lines in a ternary phase diagram through a limited number of thin-film reactions is demonstrated. Ternary phase diagrams are then used to explain the stability of refractory metals, silicides, and nitrides during various integrated circuit processing steps. The W–Si–O, Ti–Si–O, Ti–Si–N, and Ti–Al–N systems serve as examples.