Electronics Letters · 1982 · 22 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesOptoelectronic DevicesSemiconductor HeterostructuresSemiconductor LasersDouble Heterostructure DevicesDouble HeterostructuresHeterostructure LasersHeterostructure OptoelectronicsHeterostructuresMolecular Beam EpitaxyOptical Gain In SemiconductorsStimulated Emission
Optically pumped laser action at a wavelength of 0.63 μm has been achieved at 77 K in InGaP/InGaAlP double heterostructures grown on (100) GaAs substrates by molecular beam epitaxy. The threshold pump power density was about 2.5 × 103 W/cm2
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H. C. Casey, M. B. Panish, T. A. Roth · Journal of The Electrochemical Society · 1979 · 1.7K citations
Very low threshold visible TS lasers
M. Wada, Kunio Itoh, Hirokazu Shimizu et al. · IEEE Journal of Quantum Electronics · 1981 · 22 citations