Some electron diffraction contrast effects at planar defects in crystals

Abstract

Abstract Intensity profiles corresponding to transmission electron microscope images of planar defects in crystals have been calculated for a range of values of g. R, where g and R have their usual meaning. The results show that when two-beam theory is used, the defects will be effectively invisible if R.g differs from an integer by less than 0·02. When systematic many-beam theory is used, this criterion may be modified. In addition, many-beam profiles have been calculated for a number of specific cases relating to a stacking fault in silicon, and the results compared with experiment.