Latent ion tracks in amorphous silicon

Abstract

We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.