Enhancement of Ferroelectric Curie Temperature in BaTiO₃ Films via Strain‐Induced Defect Dipole Alignment

Abstract

The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.